First 4in single crystal aluminium nitride wafer opens up power ...

The process is scalable for growing AlN bulk single crystal wafers to meet production demands for this semiconductor material for power devices and UVC LEDs from its ultra-wide bandgap and very high thermal conductivity.

The 100mm substrate has a usable area of over 80% based on current requirements for UVC LEDs.

“We are extremely excited to announce the achievement of a 4-inch bulk aluminium nitride substrate,“ said Dr Naohiro Kuze, Executive Fellow, Research Laboratory of Advanced Science and Technology of Asahi Kasei, parent company of Crystal IS. “This accomplishment signifies that aluminium nitride is commercially viable for new industries beyond just UVC LEDs.“

Founded in 1997 to develop native aluminium nitride substrates, Crystal IS manufactures UVC LEDs on its commercial process for 2in diameter substrates. These Klaran and Optan LEDs are used at disinfecting wavelengths from 260 nm – 270 nm.

The commercialization of 4-inch AlN substrates will quadruple the device output of the existing footprint of the Green Island facility in New York. It will also enable the development of new applications on aluminium nitride substrates as it integrates into existing fabrication lines for power and RF devices using alternative materials.

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